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PS7801D-1A
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Diode
Forward Voltage
Reverse Current
V F
I R
I F = 5 mA
V R = 5 V
1.1
1.4
5.0
V
μ A
<R>
MOS FET
Off-state Leakage
I Loff1
V D = 35 V
0.03
0.3
nA
Current
I Loff2
V D = 40 V
0.1
1.0
<R>
<R>
Coupled
Output Capacitance
LED On-state Current
On-state Resistance
C out
I Fon
R on1
V D = 0 V, f = 1 MHz
I L = 120 mA
I F = 5 mA, I L = 10 mA
0.6
12
0.85
2.0
16
pF
mA
?
R on2
I F = 5 mA, I L = 120 mA, t ≤ 10 ms
12
16
<R>
Turn-on Time
Turn-off Time
*1, 2
*1, 2
t on
t off
I F = 5 mA, V O = 5 V, R L = 500 ? ,
PW ≥ 10 ms
0.04
0.1
0.5
0.5
ms
Isolation Resistance
Isolation Capacitance
R I-O
C I-O
V I-O = 0.5 kV DC
V = 0 V, f = 1 MHz
10
9
0.3
?
pF
*1 Test Circuit for Switching Time
I F
Pulse Input
V L
Input
50%
0
Input monitor
V O monitor
V O = 5 V
90%
Output
R in
R L
t on
t off
10%
*2 The turn-on time and turn-off time are specified as input-pulse width ≥ 10 ms.
Be aware that when the device operates with an input-pulse width less than 10 ms, the turn-on time and turn-off
time will increase.
4
Data Sheet PN10551EJ03V0DS
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